tsm 2nb65 tai wan semiconductor 1 version: b 1 7 0 6 n - channel power mosfet 65 0v, 2.0 a, 5 features 100% uis & r g t ested pb - free plating compliant to rohs directive 2011/65/eu and in accordance to wee 2002/96/ec halogen - free according to iec 61249 - 2 - 21 a pplication power supply ac/dc led lighting key performance parameters p arameter value unit v ds 650 v r ds(on) (max) 5 q g 1 3 nc to - 251 ( ipak sl ) to - 252 (dpak) notes: msl 3 (moisture sensitivity level) for to - 252 (d - pak) per j - std - 020 absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol limit unit drain - source voltage v ds 65 0 v gate - source voltage v gs 20 v continuous drain current t c = 25 c i d 2.0 a t c = 100 c 1. 4 pulsed drain current (note 1 ) i dm 8.0 a total power dissipation @ t c = 25 c p dtot 65 w single pulsed avalanche energy (note 2 ) e as 25 mj single pulsed avalanche current (note 2 ) i as 1.6 a operating junction and storage temperature range t j , t stg - 55 to +1 50 c thermal performance p arameter s ymbol limit unit junction to case thermal resistance r ? jc 1.9 c /w junction to ambient thermal resistance r ? ja 62.5 c /w notes: r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistances. the case thermal reference is defined at the solder mounting surface of the drain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design. r ? ja shown below for single device operation on fr - 4 pcb in still air.
tsm 2nb65 tai wan semiconductor 2 version: b 1 7 0 6 electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol m in t yp m ax u nit static (note 3 ) drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 650 -- -- v gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 2 2.5 4 v gate body leakage v gs = 2 0v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 650v, v gs = 0v i dss -- -- 10 a drain - source on - state resistance v gs = 10v, i d = 1a r ds(on) -- 4 5 ds = 10v, i d = 1a g fs -- 2.5 -- s dynamic (note 4 ) total gate charge v ds = 520v, i d = 2a, v gs = 10v q g -- 1 3 -- nc gate - source charge q gs -- 2. 2 -- gate - drain charge q gd -- 5 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 390 -- pf output capacitance c oss -- 3 1 -- reverse transfer capacitance c rss -- 8 -- g ate resistance f = 1 .0 mhz , open drain r g 0. 8 2.5 7.5 switching (note 5 ) turn - on delay time v gs = 10v, i d = 2a, v dd = 3 25 v, r g = 25 d(on) -- 8.2 -- ns turn - on rise time t r -- 23.2 -- turn - off delay time t d(off) -- 38 -- turn - off fall time t f -- 27 -- source - drain diode (note 3 ) diode forward voltage i s = 2a, v gs = 0v v sd -- -- 1. 2 v notes: 1. pulse width limited by the m aximum junction temperature 2. l = 20 mh, i as = 1.6 a, v dd = 50 v, r g = 25, start ing t j = 25 o c 3. p ulse test: pw 300s , d u ty cycle 2% 4. for design aid only, not subject to production testing. 5. essentially independent of operating temperature .
tsm 2nb65 tai wan semiconductor 3 version: b 1 7 0 6 ordering information part no. package packing TSM2NB65ch x0g to - 251s 75pcs / tube TSM2NB65cp rog to - 252 2,500pcs / 13 reel
tsm 2nb65 tai wan semiconductor 4 version: b 1 7 0 6 i d , continuous drain current (a) 0 0.5 1 1.5 2 0 2 4 6 8 10 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 0.1 1 10 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 0 1 2 3 4 5 0 2 4 6 8 10 0 3 6 9 12 15 characteristics curves ( t c = 25c unless otherwise noted) output characteristics transfer characteristics on - resistance vs. drain current gate - source voltage vs. gate charge on - resistance vs. junction temperature source - drain diode forward current vs. voltage i d , continuous drain current (a) v g s , gate to source voltage (v) v ds , drain to source voltage (v) r ds(on) ( ) , drain - source on - resistance i d , drain current (a) v g s , gate to source voltage (v) q g , gate charge (nc) r ds(on) , drain - source on - resistance (normali z ed) t j , junction temperature ( c) i s , reverse drain current (a) v s d , body diode forward voltage (v) v gs = 4 v v gs = 10 v v gs = 9 v v gs = 8 v v gs = 7 v v gs = 6 v v gs = 5 v 1 50 25 v gs = 10 v v d s = 520 v i d =2a 25 v g s = 10 v i d =1a 1 50
tsm 2nb65 tai wan semiconductor 5 version: b 1 7 0 6 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 characteristics curves ( t c = 25c unless otherwise noted) capacitance vs. drain - source voltage bv dss vs. junction temperature maximum safe operating are a ( to - 251 / 252 ) normalized thermal transient impedance, junction - to - case ( to - 251/252 ) normalized effective transient thermal impedance t, square wave pulse duration (sec) duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 s ingle pulse c , capacitance (pf) v ds , drain to source voltage (v) bv dss (normalized) drain - source breakdown voltage t j , junction temperature (c) ciss coss crss i d =250ua 0.01 0.1 1 10 10 100 1000 i d , drain current (a) v ds , drain to source voltage (v) r ds(on) single pulse r ? jc =1.9 c /w t c =25 c single pulse r ? jc =1.9 c /w
tsm 2nb65 tai wan semiconductor 6 version: b 1 7 0 6 package outline dimensions (unit: millimeters ) to - 251 s marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
tsm 2nb65 tai wan semiconductor 7 version: b 1 7 0 6 package outline dimensions (unit: millimeters ) to - 252 suggested pad layout (unit: millimeters ) marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
tsm 2nb65 tai wan semiconductor 8 version: b 1 7 0 6 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product descrip tion only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implie d warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown her ein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such impro per use or sale.
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